Articles Published in Peer Reviewed Journals

 

Corresponding authors marked with #

2009
20. "Epitaxial, cation-ordered, ferroelectric PbSc0.5Ta0.5O3 thin films prepared by pulsed laser deposition", A. Chopra, B. I. Birajdar, Y. Kim, I. Vrejoiu, M. Alexe, and D. Hesse, Appl. Phys. Lett. 95, 022907 (2009)

 

19. "Structural, electrical and optical properties of boron doped ZnO thin films using LSMCD method at room temperature", G. Kim, J. Bang, Y. Kim, S.K. Rout, and S. I. Woo, Appl. Phys. A 97, 4, 821-828 (2009)

 

18. "Piezoresponse force microscopy studies of PbTiO3 thin films grown via layer-by-layer gas phase reaction", M. Park, S. Hong, J. Kim, Y. Kim, S. Buhlmann, Y. K. Kim, and K. No, Appl. Phys. Lett. 94, 092901 (2009)

 

17. "Origin of surface potential change during ferroelectric switching in epitaxial PbTiO3 thin films studied by scanning force microscopy", Y. Kim, C. Bae, K. Ryu, H. Ko, Y. K. Kim, S. Hong, and H. Shin, Appl. Phys. Lett. 94, 032907 (2009) (Selected for the Virtual Journal of Nanoscale Science & Technology [9 Feb., 2009, Volume 19, Issue 6])

 

16. "The effect of nitrogen incorporation on surface properties of silicon oxynitride films", J. Hong, Y. Kim, H. Paik, K. No, and J. R. Lukes, Phys. Status Solidi-Rapid Res. Lett. 3, 1, 25-27 (2009)

2004 - 2008
15. "Screen charge transfer by grounded tip on ferroelectric surfaces", Y. Kim#, J. Kim, S. Buhlmann, S. Hong, Y. K. Kim, S.-H. Kim and K. No, Phys. Status Solidi-Rapid Res. Lett. 2, 2, 74-76 (2008) (invited article)

 

14. "Local surface potential distribution in oriented ferroelectric thin films", Y. Kim#, S. Buhlmann, J. Kim, M. Park, K. No, Y. K. Kim, and S. Hong, Appl. Phys. Lett. 91, 052906 (2007)

 

13. "Injection charge assisted polarization reversal in ferroelectric thin films", Y. Kim#, S. Buhlmann, S. Hong, S.-H. Kim, and K. No, Appl. Phys. Lett. 90, 072910 (2007)

 

12. "Combinatorial approach for ferroelectric material libraries prepared by liquid source misted chemical deposition method", K. W. Kim, M. K. Jeon, K. S. Oh, T. S. Kim, Y. S. Kim, and S. I. Woo, Proc. Natl. Acad. Sci. USA 104, 4, 1134-1139 (2007)

 

11. "Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges", U. Chon, H. M. Jang, N. S. Shin, J. S. Kim, D. C. Ahn, Y. S. Kim and K. No, Physica B: Condensed Matter 388, 1-2, 190-194 (2007)

 

10. "Tip traveling and grain boundary effects in domain formation using piezoelectric force microscopy for probe storage applications"', Y. Kim#, Y. Cho, K. No, S. Hong, S. Buhlmann, H. Park, D.-K. Min, and S.-H. Kim, Appl. Phys. Lett. 89, 172909 (2006)

 

09. "Correlation between grain size and domain size distribution in ferroelectric media for probe storage applications", Y. Kim#, Y. Cho, K. No, S. Hong, S. Buhlmann, H. Park, D.-K. Min, and S.-H. Kim, Appl. Phys. Lett. 89, 162907 (2006)

 

08. "Surface potential of ferroelectric domain investigated by Kelvin force microscopy", Y. Kim#, S. Hong, S.-H. Kim, and K. No, J. Electroceram. 17, 2-4, 185-188 (2006)

 

07. "CuO formation control as a function of mixed ratio of Cu-free powders in the synthesis of YBCO superconductors on Cu substrates", Y. Kim, S. Kim, Y.-A. Jeon, Y. Kim, H. Paik, Y. Kim, S.-C. Han, Y.-H. Han, N.-H. Jeong, T.-H. Sung, J.-I. Hong, and K. No, J. Electroceram. 17, 2-4, 1063-1067 (2006)

 

06. "Surface potential relaxation of ferroelectric domain investigated by Kelvin probe force microscopy", J. Kim, Y. Kim, K. No, S. Buhlmann, S. Hong, Y.-W. Nam, and S.-H. Kim, Integr. Ferroelectr. 85, 1, 25-30 (2006)

 

05. "Grain/domain interaction and its effect on bit formation in ferroelectric films", Y. Kim#, S. Hong, H. Park, S.-H. Kim, D.-K. Min, and K. No, Integr. Ferroelectr. 78, 1, 255-260 (2006)

 

04. "Orientation and fatigue improvement of PZT thin films on cubic textured CaRuO3 electrode", H. Paik, J. Hong, Y.-A. Jeon, S.K. Kim, Y. Kim, Y. Kim, Y. S. Kim, and K. No, Integr. Ferroelectr. 75, 1, 115-121 (2005)

 

03. "Ferroelectric properties of ultra-thin epitaxial Pb(Zr0.2Ti0.8)O3 thin films grown on SrRuO3/SrTiO3 substrates", W. S. Lee, K. C. Ahn, S. G. Yoon, H.-J. Shin, Y.-S. Kim, and K.-S. No, Integr. Ferroelectr. 73, 1, 125-132 (2005)

 

02. "Electronic structure of bismuth titanate-base films Bi4-xLnxTi3O12 dependence on substitution atom", Y. Kim#, Y. S. Kim, S.K. Kim, Y.-A. Jeon, and K. No, Integr. Ferroelectr. 73, 1, 11-16 (2005)

 

01. "Electronic structure and chemical bonding of Zr substitution of Ti site on Pb(Zr1-xTix)O3 using DV-Xa", Y. S. Kim#, Y. S. Kim, S.K. Kim, and K. No, Integr. Ferroelectr. 64, 1, 297-303 (2004)

2010~

The Yunseok Kim Research Group, School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU)

Cheoncheon-dong 300, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea, Tel: +82-31-290-7405, E-mail: yunseokkim@skku.edu